发明名称 |
METHOD OF FORMING FUSIBLE LINKS IN A SEMICONDUCTOR DEVICE |
摘要 |
A method of producing a semiconductor device provided with a fuse comprises the steps of forming a fuse layer (34) on an insulating layer (32) lying on a semiconductor substrate (31); forming an interrupting layer (40) covering the fuse layer and the insulating layer; forming an insulating protective layer (43) covering the interrupting layer; selectively etching the protective layer, so as to form a partial window (55), with a suitable etchant which does not etch the interrupting layer (40); and etching the exposed interrupting layer to complete the window (56) through which a portion of the fuse layer (34) and a portion of the insulating layer (32) are exposed. The insulating layer (32) is not removed, so that the reliability of the semiconductor device will not deteriorate. |
申请公布号 |
DE3379929(D1) |
申请公布日期 |
1989.06.29 |
申请号 |
DE19833379929 |
申请日期 |
1983.03.17 |
申请人 |
FUJITSU LIMITED |
发明人 |
YABU, TAKASHI;KANAZAWA, MASAO |
分类号 |
G11C17/06;G11C17/14;H01L21/82;H01L21/8242;H01L23/525;H01L27/10;H01L27/108;(IPC1-7):H01L23/52;H01L21/90 |
主分类号 |
G11C17/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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