摘要 |
Integrated circuit in a semiconductor chip and process for its production, in which upwardly tapering metal columns (22) are applied to the contact metallisations (20, 21), applied on the layered structure (1) of the semiconductor chip, at the locations intended for the bonding of conductor tracks (23), for the forming of plated-through holes, after which there is applied a dielectric layer (10), which leaves the upper sides of the metal columns (22) free, and then the conductor tracks (23) are applied. <IMAGE> |