发明名称 Integrated circuit and process for its production
摘要 Integrated circuit in a semiconductor chip and process for its production, in which upwardly tapering metal columns (22) are applied to the contact metallisations (20, 21), applied on the layered structure (1) of the semiconductor chip, at the locations intended for the bonding of conductor tracks (23), for the forming of plated-through holes, after which there is applied a dielectric layer (10), which leaves the upper sides of the metal columns (22) free, and then the conductor tracks (23) are applied. <IMAGE>
申请公布号 DE3742669(A1) 申请公布日期 1989.06.29
申请号 DE19873742669 申请日期 1987.12.16
申请人 SIEMENS AG 发明人 RISTOW,DIETRICH,DIPL.-PHYS.DR.
分类号 H01L23/522 主分类号 H01L23/522
代理机构 代理人
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