| 发明名称 |
MOS transistor with enhanced isolation capabilities. |
| 摘要 |
<p>An isolating transistor (30) is provided to isolate N+ diffused regions (16b, 20b) of active devices (10, 12). The gate (32) of the isolating transistor (30) is of the same conductivity type as the underlying semiconductor surface (28), thereby increasing the threshold voltage of the isolating transistor (30).</p> |
| 申请公布号 |
EP0321738(A2) |
申请公布日期 |
1989.06.28 |
| 申请号 |
EP19880119785 |
申请日期 |
1988.11.28 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
TIGELAAR, HOWARD L.;PATERSON, JAMES L. |
| 分类号 |
H01L21/76;H01L21/765;H01L27/08;H01L27/092;H01L29/78 |
主分类号 |
H01L21/76 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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