发明名称 |
Self-limiting mask undercut process. |
摘要 |
<p>A process for manufacturing GaAs FET's having refractory metal gates provides for reducing the size of the gate relative to a mask by an etch sequence which results in precisely controlled and repeatable self-limited undercutting of the mask. A reactive ion etch of the refractory metal in a CF4O2 plasma containing an inert gas provides the self-limiting undercut at a pressure in the range of 175-250 mTorr when the power is less than 0.15 W/cm<2>. Preceding the undercut, an anisotropic RIE in a CF4 plasma can be employed to clear unmasked areas of the refractory metal and an initial sputter cleaning in argon improves the quality of the initial etch.</p> |
申请公布号 |
EP0322244(A2) |
申请公布日期 |
1989.06.28 |
申请号 |
EP19880312236 |
申请日期 |
1988.12.22 |
申请人 |
INTERNATIONAL STANDARD ELECTRIC CORPORATION |
发明人 |
BALZAN, MATTHEW LEE;GEISSBERGER, ARTHUR EUGENE;SADLER, ROBERT ALLEN |
分类号 |
C23F4/00;H01L21/285;H01L21/3213;H01L21/338;H01L21/8252;H01L29/47 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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