| 摘要 |
PURPOSE:To prevent the local deterioration of the quality of film of amorphous Si due to a steeply stepped portion and thereby to obtain a CCD image sensor having little image defect, by improving the flatness of a second electrode which is the ground of H-shaped amorphous Si. CONSTITUTION:An N<+> charge storage layer 2 and N<+> channels 31 and 32 are formed on a P-type Si substrate 1 and isolated by P<+> layers 41 and 42. Poly-Si gate electrodes 71-82 are provided in insulating films 61-62, an opening is made, an N<++> layer 5 is provided, electrodes 91 and 92 of molybdenum silicide and poly-Si are attached, and covering is made with insulating films 101 and 102. Next, poly-Si is connected by a CVD method and phosphorus doping is applied. A resist mask 12 being given, poly-Si 11 is oxidized 131 and 132 to form second electrodes 111 and 112, and thereafter the mask is removed. Subsequently, H-shaped amorphous Si 14 is deposited by a glow discharge CV method or the like, ITO 15 is attached, and thus the device is completed. Since a steeply stepped portion on the electrodes 11 is smoothed supplementarily with SiO2 films 131 and 132, the local deterioration of the quality of film of H-shaped amorphous Si 14 is prevented, and thus a solid state-image sensing device having a stable characteristic being maintained is obtained. |
