| 摘要 |
PURPOSE:To obtain a solid-state image sensing device which is free from a dotty image defect and whose residual image is of a low degree, by doping selectively natural poly-Si of high resistance to provide a pixel electrode and a pixel isolating layer. CONSTITUTION:A P-type substrate 1 is isolated by a P<+> layer 2 to provide a CCD channel N<+> layer 3 and a storage diode N<++> layer 4, and a transfer gate electrode 5 is formed with an insulating film 6 interposed between. A pixel electrode 7 is fitted to the N<++> layer 4 aud covered with a smoothing layer 8. Next natural poly-Si 9 of high resistance is superposed, a resist 12 is provided, and As ions are implanted to lower the resistance of a pixel electrode 9-1. The portion of the resist 12 becomes a pixel isolating layer. The resit 12 being removed, a photoconductive film 10 and a trausparent electrode 11 are provided on the whole surface of an image pickup region by a conventional method. According to this constitution, there is no stepped shape in an interface between the photoconductive film 10 and the pixel electrode 9-l and the pixel isolating layer 9-2. Accordingly, a region wherein the quality of film is abnormal is not formed in the initial stage of deposition of the photoconductive film, a dotty image defect due to the photoconductive film does not occur, and therefore a picture characteristic is improved remarkably. Thus, a residual image characteristic is improved sharply. |
