| 摘要 |
PURPOSE:To secure the thickness of an insulating layer endurable against damages due to junctions, by providing a junction pad after providing an insulating film on an Si substrate thinner than a field oxide film and after laminating a conductive layer and an insulating layer. CONSTITUTION:The poly Si conductive layer 13 and an SiO2 layer 14 are superposed on a gate oxide film 12 on the P type Si substrate 11, and the junction pad 15 is formed by opening a window on a protecting film 18. Besides, the conductive layer 13 is connected to the N<+> layer 16 formed at the position other than that of the pad 15. In this constitution, the film thickness sufficiently endurable against damages due to the junction can be secured on the substrate under the junction pad for the take-out of an external electrode. Accordingly, the decrease of the yield and reliability at assembly can be prevented, enabling it to cope with the thinning of the layer of the insulating layer which is apt to happen at the time of making the product microminiaturized. |
