| 摘要 |
A low noise doped quantum well avalanche photodector (APD) having repeated superlattice units. Where the majority carriers are electrons, each unit is formed from p+-n+ layers of a first material having a first ionization threshold, a near intrinsic layer of a second material having a smaller ionization threshold, and a near intrinsic layer of the first material. Such an APD can be fabricated in the GaAs/AlGaAs material system.
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