| 摘要 |
PURPOSE:To reduce the change of the film thickness of a single crystal layer formed to an insulating film shape by forming an opening having a specific area to an insulating film on the downstream side in the direction of scanning of laser beams on viewing from an opening for a scribing line shaped to the insulating film onto a substrate. CONSTITUTION:An SiO2 film 2 in film thickness of 1mum shaped onto a single crystal Si substrate 1 is patterned to form openings 3, 4. The opening 3 is used as a scribing line (100-200mum width and 10-20mm length). The openings 4 are formed to a square having an area of 25mum<2> or less of one side of 5mum shaped at positions of at least 10mum such as 50mum on the downstream side in the direction of scanning of laser beams 9 of the opening 3 at intervals of 15mum along the opening 3. Semiconductor poly-Si layer 5 in thickness of 0.5mum and an SiO2 film 6 in thickness of 10nm are deposited, and antireflection films (nitride films) 7, 8, 12 for controlling temperature distribution are shaped. Laser beams 9 having a beam diameter of 100mum are scanned, and the poly Si 5 is melted partially 10 and recrystallized, thus forming a single crystalline Si film 11. The temperature difference of molten Si is generated in the opening 3 and on the SiO2 film 2 and one part of the Si film 11 is thinned, but the effect is not exerted on the downstream side in the direction of scanning of laser beams 9 of the openings 4.
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