| 摘要 |
PURPOSE:To prevent the generation of leakage currents among generating regions while increasing an effective substrate area as a rate of the areas of the generating regions to the area of a substrate by completely isolating an amorphous semiconductor contributing to power generation by light irradiation into a plurality of generating regions. CONSTITUTION:Glass, light-transmitting ceramics, etc., are used as an insulating substrate 1. First electrodes 2a-2c are formed by the transparent conductive films of a metallic oxide, and arrayed on the insulating substrate 1, and connecting extending sections 3a-3c extending toward the periphery of the substrate 1 are shaped. Amorphous semiconductor layers 4a-4c are P-I-N joined because holes and electrons are generated by light irradiation, and applied onto approximately the whole surface of the insulating substrate 1. Laser fusion trenches 5a-5c fusion-cut an amorphous semiconductor layer 4, separate each generating region a-c into the amorphous semiconductor layers 4a-4c, and are shaped at every section among the generating regions a-c in order to expose one parts of the connecting extending sections 3a-3c in the first electrode. Second electrodes 6a-6c are formed by metallic films, and disposed onto the amorphous semiconductor layers 4a-4c. Connecting extending sections 7a-7c extending toward the periphery of the substrate 1 from the generating regions a-c are formed to the electrodes 6a-6c. |
