| 摘要 |
PURPOSE:To decrease the quantity of the light to be leaked to the outside of a prescribed waveguide and to facilitate building of a light transmission system by providing a gouge to the branch part of the waveguides. CONSTITUTION:An InGaAsP layer 2 is grown by using n-type InP having a carrier concn. of a prescribed value as a substrate 1, then an InP layer 3 is grown as a clad layer, on which an InGaAsP layer 4 is grown as a gap layer. A p-type part is formed by diffusing Zn and in succession, a gap layer 3 and a photoconductive layer 2 are etched by gaseous Cl2 and by using a photomask provided with the gouge, by which a shape 12 is formed. An Au-Zn electrode 7 is thereafter formed and finally, Au-Ge-Ni is deposited by evaporation on the rear face to form an (n) electrode 11. The optical switch is thus obtd. |
