| 发明名称 |
Plasma CVD of amorphous silicon thin film |
| 摘要 |
An amorphous silicon thin film is disclosed, which is produced by plasma CVD in which hydrogen-diluted SiH4 and N2O are supplied during chemical vapor deposition as reacting source gases for the chemical vapor deposition, wherein the degree of hydrogen dilution is from 10 to 20.
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| 申请公布号 |
US5391410(A) |
申请公布日期 |
1995.02.21 |
| 申请号 |
US19930068070 |
申请日期 |
1993.05.28 |
| 申请人 |
SHOWA SHELL SEKIKU K.K. |
发明人 |
NII, TETSURO;SICHANUGRIST, PORPONTH;KASE, TAKAHISA |
| 分类号 |
H01L21/205;H01L31/04;H01L31/20;(IPC1-7):B05D3/06 |
主分类号 |
H01L21/205 |
| 代理机构 |
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