| 摘要 |
<p>A method for forming a high-quality CdTe film by an improved proximity sublimation method. The method includes a step in which a film containing a CdTe semiconductor material is formed on the surface of a support by applying paste containing the semiconductor material to the surface of the support, a second step in which the support and a substrate on which the CdTe film is to be formed are placed closely to each other so that the film faces to the surface of the substrate, and a third step in which the CdTe film is formed on the substrate by vaporizing the semiconductor material in the film by heating the film and substrate.</p> |
