| 摘要 |
<p>An impurity doping method for introducing impurity atoms contained in a photoresist layer into a semiconductor substrate is disclosed. The method includes fabricating steps for forming the photoresist layer containing impurity material on a surface of the substrate, for patterning the photoresist layer, for ashing the photoresist layer by exposing the photoresist layer to oxidising activated reaction gas such as ozone gas or oxygen reactive neutral species generated in a plasma generating apparatus of downstream type, leaving impurity atoms on the substrate, and for raising the substrate temperature to diffuse impurity atoms into the substrate to form a doped region therein. Damage to the semiconductor substrate caused by ion bombardment is thus avoided.</p> |
