| 摘要 |
Process for production of fine particles of silicon carbide, consisting of an agglomerate of submicron particles which have a specific surface of at least 100 m<2> g<-><1>, intended especially for use as a catalyst support for petroleum chemistry and for catalytic reactions at elevated temperature which may be up to 1000 DEG C, this process consisting in reacting silicon monoxide SiO vapour over carbon, being characterised in that:… - SiO vapour is generated in a first reaction zone by heating a mixture of SiO2 + Si (10) to a temperature of between 1100 and 1400 DEG C at a pressure of between 0.1 and 1.5 hPa;… - in a second reaction zone the SiO vapour is brought into contact with reactive carbon (12) in divided state, with a specific surface of at least 200 m<2> g<-><1> at a temperature of between 1100 and 1400 DEG C. …<??>The reactive carbon is preferably doped by an addition of 1 to 10 % by weight of a metallic element chosen from uranium, cerium, titanium, zirconium, hafnium and the lanthanides. …<IMAGE>… |
