| 摘要 |
<p>PURPOSE: To form a device by which high memory density can be attained by forming the main body of a cathode on a substrate, closing the opening of an electric insulation layer formed thereon through a fusible plug, and forming an anode thereon so as to fuse the plug. CONSTITUTION: A cathode main body 3 is formed on a substrate 4. Thereafter, a metal or composite layer 5, a boron phosphate glass BPSG layer 7, a grid layer 9, a BPSG layer 15, and a resist layer 16 are formed thereon, and a tunnel 18 through which the tip 8 of a cathode main body is seen via the opening 17 of the layer 16. After the layer 16 is removed, a resist plug 19 is filled into the tunnel 18. A metal layer 20 is formed on the layer 15 and the plug 19. When the rest resist material and a column 19 are removed, an anode piece 21 is bridged with the tunnel 18. A triode of a vertical structure is thus composed of an open circuit provided between a grid and an anode provided apart from a cathode, and large scale integration becomes possible.</p> |
