| 摘要 |
<p>PURPOSE:To increase the strength of electron flow of an electron transfer mask having a stable electron emission plane and lessen the shot time of exposure, by shielding electrons emitted from a layer structure through a conductive layer with a shielding pattern when the electrons are emitted in a vacuum from the layer structure through the conductive layer in a blank part of the shielding pattern. CONSTITUTION:A p-type Si well 22 is formed at an exposure pattern formation region 21A of an n<->type Si substrate 21 and at a p-type contact formation part 21B by diffusing p-type impurities. And Si3N4 is grown at the whole part with the exception of the p-type contact formation part 21B and an Si3N4 barrier layer 23A and an SiO2 barrier layer 23B are formed by oxidizing the surface. Then, a metallic film 24 consisting of Au, A, W, Ta, Pd, and the like is deposited at the whole surface and a shielding pattern 24A is formed at the exposure pattern formation region 21A and a p-type contact 24B is formed at the p-type contact formation part 21B by patterning respectively. Further, a conductive layer 25 consisting of noble metals such as Pt and the like or a metallic film consisting of LaB6 and the like are deposited at the whole surface. In such a case, it is better for the conductive layer 25 to choose a thinner one but it is necessary no choose materials lest upper resistance should become larger in view of applying bias.</p> |
