| 摘要 |
PURPOSE:To obtain a large light emitting output by a method wherein a semi- insulating layer which serves as a current constriction layer is formed on a primary face of a substrate through a vapor phase growth method and the thickness between an active layer and the face of the laminated section is made to be thin. CONSTITUTION:A mesa-shaped groove 180 is provided to a GaAs layer 110 on a primary face side of a substrate 101, that is, the mesa-shaped groove 180 is provided to the laminated layers in a direction perpendicular to the substrate 101 so as to enable its base to reach to the substrate 101. An n- AlyGa1-yAs clad layer 102 (0.3<y<0.6) is formed inside the groove 180 and on the GaAs layer 110, and an n-AlzGa1-zAs active layer 103 (0<z<0.2) is laminated thereon. As a semi-insulating AlxGa1-xAs layer 109 is formed on the substrate 101 through a vapor phase growth method, injection of the current into an active region is improved in efficiency. And, the thickness between the active layer and the surface of the laminated section can be made to be thinner, so that a heat dissipation is improved in efficiency, the decrease of a light emitting efficiency due to the temperature rise of the active region can be prevented, and a large light emitting output can be obtained. |
