| 摘要 |
PURPOSE:To prevent the lowering of a read signal level, and to increase working speed by forming a read (a second MOS type) transistor operated by a write signal and shaping a diode connected in series with a drain region in the transistor. CONSTITUTION:A gate electrode for a write transistor 41 having n-type MOS structure is connected to a write word line 40 for information and a source electrode for the transistor 41 to a bit line 42 in a circuit, and a drain electrode for the transistor 41 is connected to a gate electrode as a capacitance section in a read transistor 43 having P-type MOS structure. The drain electrode is connected to the bit line 42 through a protective diode 44 for preventing the operation of the transistor 43 at the time of write in series, and a source electrode for the transistor 43 is connected to a read word line 45 for information. An N<+> type diffusion layer 25 is shaped as a gate electrode, an N<-> type polysilicon layer 30 as a channel section, and P<+> type polysilicon layers 32 as a source electrode and a drain electrode in the read transistor 43 at that time. Accordingly, the lowering of a read signal level is obviated, and working speed is increased. |
