| 摘要 |
<p>PURPOSE:To eliminate the contact of a fine metal wiring with the side edge of a semiconductor chip by forming the height of a bonding surface higher than the upper face of the chip of the piece of a material to which the wiring is easily ultrasonic-bonded. CONSTITUTION:A metal piece 11 is so formed of aluminum that a fine metal wiring 7 is, for example, easily ultrasonic-bonded, and secured by a brazing material, such as a solder or the like on horizontal parts 3a, 5a of electrodes 3, 5. The thickness of the piece 11 is so formed in such a size that, when the piece is secured onto the electrodes 3, 5, the upper face 11a becomes higher than the upper face of a transistor chip 6 on an electrode 4. Accordingly, the wiring 7 is disposed at its bonding face of the piece 11 higher than the upper face of the chip 6. Thus, it can prevent the wiring from being brought in contact with the side edge of the chip.</p> |
