| 摘要 |
PURPOSE:To prevent the precipitation of silicon in the case of using electrodes composed of Al/Si alloy by using the electrodes and a wiring and preventing silicon precipitation caused by the electrodes and the wiring composed of Al/Si alloy at peripheral circuit parts. CONSTITUTION:Peripheral circuit parts between which electrodes and a wiring composed of Al/Si, for example, a source electrode 19 and a drain electrode 20 composed of Al/Si alloy are provided between a memory part which has electrodes and a wiring laminated a polycrystalline silicon film, for example, an n<+> type polycrystalline silicon film 11 and metal silicide film, for example, a tungsten silicide film 12 and a silicon semiconductor substrate (for example, an n<+> type source area 16 or an n<+> type drain area 17) in at least an electrode contact hole of the same film as laminated electrodes and a wiring are provided. Therefore, silicon precipitation can be prevented in the case of using electrodes composed of Al/Si alloy without increasing any process, and so contact resistance is not increased even if an electrode contact hole is miniaturized. |
