| 摘要 |
PURPOSE:To enable an insulating film in high flatness to be formed by a method wherein the second resist layer to be baked at the temperature lower than that in the first resist layer is formed on the first resist layer, and a metallic film is formed on a substrate and then the second resist layer is resolved to form wiring patterns, and the insulating film is formed on the wiring patterns and the first resist layer. CONSTITUTION:The second resist layer 12 is formed on the first resist layer 11 and then a metallic film 13 in almost the same thickness as that of the first resist layer 11 is formed on a substrate 10 including the second resist layer 12. Next, the substrate 10 is immersed in acetone to resolve the resist layer 12 of the substrate 10 so that the metallic film 13 may be lift off to form wiring patterns 14 comprising the first resist layer 11 and the metallic film 13 almost flatly on said substrate 10. Then, an interlayer insulating film 15 to be baked at the temperature lower than that the resist layer 11 is formed on the resist layer 11 and the wiring patterns while the other wiring patterns are successively formed in laminated layers on the insulating 15. |
