| 摘要 |
PURPOSE:To improve the reliability and the yield while forming a compound oxide film on a silicon substrate and preventing an abnormal plating from occurring on a mesa step part by a method wherein the silicon substrate etched away using fluoric acid or nitric acid base etchant is irradiated with beams of light at the end of the etching process. CONSTITUTION:Silicon oxide films 2 are formed on a silicon substrate 1, a gold electrode 3 is formed in an opening in the silicon oxide films 2 and then the silicon substrate 1 is etched away with fluoric acid or nitric acid base etchant using a photoresist 4 as a mask to erect a mesa structure. When the silicon substrate at the end of etching process is irradiated with beams including ultraviolet rays, a converted oxide film 5 is formed on the surface of silicon substrate exposed to the etchant by photochemical reaction. Finally, the photoresist 4 is removed and another photoresist 6 is patterned to form a silver bump electrode 7 on the gold electrode 3. |
