| 摘要 |
PURPOSE:To improve bondability of an outer terminal of a semiconductor chip to a bonding wire by constituting the outer terminal of a semiconductor chip of an aluminium alloy material, to which a migration reducing element is added, and constituting the bonding wire of a metal material having hardness actually equal to said outer terminal. CONSTITUTION:An outer terminal 4C of a semiconductor chip 4 is constituted of an aluminium alloy material, to which a migration reducing element (for example Cu), and a bonding wire 5 is constituted of a metal material (Cu or its alloy) having hardness actually equal to the outer terminal 4C. Thereby, the outer terminal 4C and the bonding wire 5 have little difference in their hardness so that an alloy layer (Al-Cu alloy layer) both of them is easy to be formed in the interface between the outer terminal 4C and the bonding wire 5 by thermal bonding so as to improve bondability. Further, by constituting a lead frame of a semiconductor device 1 of a precipitation hardening type copper material, the bonding wire Cu, 5 and the lead frame (precipitation hardening type copper material) are formed of the same material so as to be also to heighten bondability of them. |
