SEMICONDUCTOR DEVICE HAVING TEST STRUCTURE

摘要

A semiconductor device is provided. First and second pads are electrically connected to a plurality of test structures. Each test structure includes an active region, active patterns, gate electrodes and an electrode pattern. The active region includes a rounded corner portion. The active patterns protrudes from the semiconductor substrate and extends in parallel in a first direction. The gate electrodes crosses over the active patterns in a second direction. One gate electrode is electrically connected to the first pad. The electrode pattern is disposed at a side of the gate electrode electrically connected to the first pad. The electrode pattern is electrically connected to the second pad. The electrode pattern crosses over the active patterns. An overlapping area of the electrode pattern and the active patterns in each test structure is different from an overlapping area of the electrode pattern and the active patterns in other test structures.

主权项

1. A semiconductor device comprising:
first and second pads disposed on a semiconductor substrate; and a plurality of test structures disposed on the semiconductor substrate, wherein each test structure comprises:
an active region having a rounded corner portion;a plurality of active patterns protruding from the semiconductor substrate and extending in parallel in a first direction;a plurality of gate electrodes crossing over the active patterns in a second direction, wherein one of the plurality of gate electrodes is electrically connected to the first pad; andan electrode pattern disposed at a side of the one of the plurality of gate electrodes, wherein the electrode pattern is electrically connected to the second pad, wherein the electrode pattern crosses over the plurality of active patterns, wherein an overlapping area of the electrode pattern and the plurality of active patterns in each test structure is different from an overlapping area of the electrode pattern and the plurality of active patterns in other test structures.