| 摘要 |
PURPOSE:To provide fatigue resistance such as of a passivated resistor and also improve electric and thermal characteristics by specifying the thickness of a non-passivated resistor. CONSTITUTION:A heating element resistor 22 is created on a semiconductor structure 26 including a silicon substrate 28 and a SiO2 thermal barrier layer 30 with a thickness of about 15,000Angstrom . A resistance material 32 is allowed to settle on the thermal barrier layer 30, and a conductive layer 34 is accumulated on the resistance material 32. The best suited resistance material is TaAl, and the conductive layer 34 can be made of gold. The conductive layer 34 is allowed to have a thickness of about 5,000Angstrom , and a resistor layer to have a thickness of min 1,000Angstrom . Thus the performance of the passivated resistor can be improved compared to that of the non-passivated resistor with a smaller thickness. The performance can be made equivalent to the passivated resistor structure by at least doubling the thickness. |
