| 摘要 |
<p>This invention discloses a system (10) for chemically depositing various materials carried by a reactant gas onto substrates (28) for manufacturing semiconductor devices. The system (10) includes special loading and unloading subsystems (12, 14) for placement of substrates (28) to be processed into the system (10) and subsequent extraction without contamination of the system. A special substrate handling subsystem (16) is provided for moving the substrates (28) to and from at least one processing subsystem (15) without physically contacting the planar surfaces of the substrates (28). The processing subsystem (18) includes a horizontal gas flow reaction chamber (240) having a rotatable susceptor (248) therein for rotating the single substrate (28) supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables. The processing subsystem (18) is separated from the handling subsystem (16) by a special isolation valve (176) and a gas injection device (178) is used to inject the gas into the reaction chamber (240) with a predetermined velocity profile. A special temperature sensing arrangement (260) is provided in the processing subsystem (18) for controlling a radiant heating subsystem (272) which is provided above and below the reaction chamber (240).</p> |
