MANUFACTURE OF THIN FILM TRANSISTOR ARRAY

摘要

PURPOSE:To prevent shorts-induced line defects and point defects by dipping into a solution of a first metal layer after forming a first transparent insulating film and prior to forming a second metal layer. CONSTITUTION:A thin film transistor array is dipped into an etching solution of a first metal layer Cr 2 at room temperature after forming a second insulating layer 11 by means of ordinary photolithography and etching and prior to coating an amorphous silicon semiconductor layer containing heavily doped impurities such as P or As. According to the constitution, when produced pinholes 18 which cause shorts are present, the pinholes do not cause shorts since the first metal layer at the pinholes is etched by being dipped into the etching solution of the first metal layer. This contributes to reduce line and point defects attributable to shorts, thereby allowing thin film transistor arrays with high yield to be manufactured.