| 摘要 |
PURPOSE:To improve reliability of semiconductor devices while preventing the deterioration of dielectric strength induced by reaction between a gate insulating film or interlayer insulating film and a high melting point metal layer of a gate electrode and controlling the threshold voltage of a transistor, by coating the surroundings of the high melting point metal layer consisting of the gate electrode with a high melting point metal nitride layer, or like means. CONSTITUTION:A gate electrode comprises a high melting point metal nitride layer 4 arranged on a gate insulating film 8, a high melting point metal layer 5 or high melting point metal silicide layer arranged on such high melting point nitride layer 4, and a high melting point metal nitride layer 6 or high melting point metal oxide layer coating the surface of such high melting point metal layer 5 or high melting point silicide layer. For example, a field-effect transistor is constructed of the gate insulating film 3; the gate electrode in which a tungsten nitride layer 5 and a tungsten layer 5 are stacked upon such insulating film 3 as barrier layers and a tungsten nitride layer 6 is formed by coating the surface of such tungsten layer 5; a source region 7 and a drain region 8 which are of opposite conductivity type diffusion layer formed within an element forming region matching such gate electrode and a field insulating film 2. |
