| 摘要 |
PURPOSE:To lengthen the length of a low resistance layer between electrodes just under an anodizing film, to increase the resistance value of the whole low resistance layer and to improve sensibility by forming a plurality of trenches parallel with the electrodes to the surface section of a compound semiconductor held between the electrodes. CONSTITUTION:A compound semiconductor 2, electrodes 3 and an anodizing film 4 are shaped onto a substrate 1 as a high resistor. Since a plurality of trenches 5 are formed to the surface of the compound semiconductor 2 as a foundation to which the anodizing film 4 is shaped, the anodizing film 4 is formed onto an irregular surface including the trenches 5. The length of a low resistance layer is increased between the electrodes 3 owing to irregularities shaped by the trenches 5. Accordingly, the resistance value rs' of the low resistance layer in an equivalent circuit diagram for element resistance takes a large value, thus inhibiting the reduction of a combined resistance value. |
