| 摘要 |
PCT No. PCT/JP86/00443 Sec. 371 Date May 4, 1987 Sec. 102(e) Date May 4, 1987 PCT Filed Aug. 29, 1986 PCT Pub. No. WO87/01522 PCT Pub. Date Mar. 12, 1987.A novel method which enables a quaternary III-V group crystal to be readily formed on a III-V group crystal so that the former crystal lattice-matches with the latter crystal. More specifically, it is easy to produce a superlattice structure on a III-V group crystal substrate, the superlattice structure consisting of a first III-V group (hereinafter referred to as "III1-V1") binary crystal layer which lattice-matches with the substrate, and a III-V group (III1-III2-V2) ternary crystal layer which similarly lattice-matches with the substrate. It is possible to obtain an even more stable superlattice layer by selecting the ratio between the film thickness of the (III1-V1) crystal and the film thickness of the (III1-III2-V2) crystal so that, when the superlattice structure is mixed-crystallized spontaneously or by means of impurity doping, the mixed-crystallized composition lattice-matches with the previous crystal.
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