| 摘要 |
PURPOSE:To improve the degree of freedoms of wirings and to apply a stable substrate potential by eliminating the formation of two conductive layers on the same insulating films, and forming a conductive layer for applying the substrate potential on a guard ring diffused layer. CONSTITUTION:First insulator isolating layers 8a-8c are formed on one conductivity type semiconductor substrate 1, semiconductor element forming regions are divided, and guard ring diffused layers 7 in contact with the inner peripheral edges of the layers 8a-8c are formed. Further, second insulator isolating layers 14a, 14b in contact with the inner peripheral edges of the layers 7 are formed. MOS transistors Tr made of source, drain regions 4a, 4c and gate electrodes 3a, 3b are formed on regions surrounded by the layers 14a, 14b. A first insulating film 9 is deposited on a whole surface including a first conductive layer layer 2, the MOSTr. A hole is opened in the film 9 on the electrode 3b, a second conductive layer 5 and a contact 6a are formed to connect the electrode 3b with the layer 5. Then, a second insulating film 10 is deposited on the surface including the layer 3 and the film 9. |
