| 摘要 |
PURPOSE:To form a semiconductor laser which operates in a stable single axial mode to be able to modulate at a high speed with low threshold and high efficiency by forming a groove by etching between a window region and a region except the window region, and forming an insulating layer by proton or ion implanting. CONSTITUTION:A lambda/4 shift diffraction grating having 2400Angstrom of period is formed by an interference exposure method employing a phase shifting film on an N-type InP substrate 110. Then, in a first LPE growth, a nondoped InGaAsP optical guide layer 120, an N-type InP buffer layer 130, a nondoped active layer 140, and a P-type InP clad layer 150 are sequentially grown. Then, after it is etched to form a buried structure and a window structure, a buried growth is conducted by second LPE growth, thereby forming a window structure. Eventually, after electrodes are formed on a substrate side and a grown layer side, a groove 500 is formed except the vicinity of a central mesa between the region 100 and an active region 200. Thereafter, SiNx films 300 are formed on both end faces. |
