Device for ion etching of substrates with the support of a magnetic field

摘要

A device is described for ion etching substrates with the support of a magnetic field, which has an electrode arrangement to which a radio-frequency voltage is applied and ionises a gas in a receptacle, and on the cathode of which the substrate is contiguously arranged, and having a magnet arrangement for generating a static magnetic field. The device according to the invention is distinguished in that the magnet arrangement for generating a spatially extended field in the region of the cathode, whose field lines extend parallel to the electric field lines of the DC self bias, has two annular ironless coils which are arranged above and below the cathode and whose spacings from the cathode are the same, and that the axis of symmetry of the electrode arrangement, which has a cylindrical geometry, coincides with the central axis of the coils.