| 摘要 |
PURPOSE:To improve the pattern precision by enhancing the etching resistance and preventing any side etching from occurring by a method wherein a bridge agent is added to a lower resist to increase the bridge density of surface agent on the lower layer resist vulnerable to the side etching. CONSTITUTION:A substrate 11 is coated with ordinary lower resist as the first layer 12 and after removing solvent by baking process at 80 deg.C for 30 minutes, the surface is irradiated with Deep UV to be hardened. Next, the layer 12 is coated with ordinary lower layer resist to which a bridge agent in molar fraction of 95:5 is added as the second layer 13 and after removing solvent by baking process at 80 deg.C for 30 minutes, the surface is irradiated with Deep UV to be hardened for increasing the bridge density of the second layer higher than that of the first layer. The lower layer resist 13 is coated with resist for multilayers as an upper layer 14 and after baking process at 100 deg.C for 20 minutes, the upper layer 14 is electron beam-exposed to be patterned. Finally, the lower layer resists 13, 12 are etched away by reactive ion etching process using the patterns of the upper 14 as masks. |
