| 摘要 |
PURPOSE:To realize an LED having high fiber coupling output with a high manufacturing yield, by constructing a semiconductor light-emitting diode having a double-hetero structure including an active layer such that it has an aperture pointed to particular directions while a circular-mesa-type light-emitting section is formed within the aperture. CONSTITUTION:On an N-type InP substrate 11, there are deposited an N-type InGaAsP active layer 13, a P-type InP layer 14 and a P-type InGaAsP contact layer 15 sequentially in that order by the liquid-phase epitaxy. Then, an aperture 17 is formed by a chemical etching process such that it includes a circular mesa 16 with a diameter of 25mum at the center thereof and has configurations pointed to the directions <110>. An insulating film of silicon nitride 18 is deposited on the surface of the aperture 17 and P-type InGaAsP contact layer 15. Subsequently, the insulating film on the top surface of the circular mesa 16 is removed by a selective etching process using photoresist, and a TiPt film is formed to provide a P-electrode 19 on the surface from which the insulating film has been removed. The N-type InP substrate 11 is polished to decrease its thickness to about 100mum and then an AuGeNi film is formed to provide an N-electrode 21. |
