| 摘要 |
PURPOSE:To enhance the heat-resisting property and the environmentresisting property of the title transistor as well as to make it possible to use the transistor in a severe environment by a method wherein all of a P-type semiconductor layer part, an N-type semiconductor layer part and an insulating layer part are composed of a diamond layer in a MIS structure. CONSTITUTION:An N-type diamond semiconductor layer 2 is formed on a diamond single crystal substrate 1, and a P-type diamond semiconductor layer 4 is selectively formed thereon. Besides, a nondoped diamond insulating layer 5 is selectively formed on the abovementioned layer 4. Electrodes 6, 6' and 6'' are provided on a source, a gate and a drain respectively by etching a part of the insulating layer 5. Through these procedures, a field-effect transistor is constituted. As diamond has a large band gap of 5.5eV or thereabout, the temperature region corresponding to an intrinsic region is not present at about 1400 deg.C or below at which the diamond is thermally stabilized. Also, the diamond is chemically stabilized. Accordingly, the device made of diamond can be operated at a high temperature. |
