| 摘要 |
PURPOSE:To check performance of a device during its operation and to maintain high accuracy, by using a test reticle, exposing a plurality of first patterns on a resist layer, thereafter exposing only a second pattern, overlapping the second pattern on the latent images of the first patterns, and performing exposure measurement. CONSTITUTION:The pattern image of a test reticle TR is exposed at a specified region on a wafer. The shape of an opening is determined so that only a second pattern 17 of the test reticle TR is lighted. Then, the projected image of the light transmitting edge part of the second pattern is made to agree with the transferred images of rectangular patterns 14, which were exposed before. Then exposure is performed. Thereafter, the second pattern 17 is overlapped on latent images 15a, 16a, 18a and 19a corresponding to mark patterns 15, 16, 18 and 19, and exposure is performed. When one-dimensional position devaition between the latent images 16a and 17a and the like are detected, the amount of distortion at an aligning position within a projected field of view can be measured. |
