发明名称 |
READ ONLY SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD |
摘要 |
A semiconductor memory device is formed of a polycrystalline silicon electrode terminal layer, which is formed on a MOS transistor except over the gate region and is connected to the drain region of the MOS transistor, and metal wire layer, which is formed on the MOS transistor except over the gate region and is connected to the electrode terminal layer to transmit output signals. Data is written into the semiconductor memory device by ion implantation of the gate of the MOS transistor after the metal wire layer is formed. |
申请公布号 |
DE3476611(D1) |
申请公布日期 |
1989.03.09 |
申请号 |
DE19843476611 |
申请日期 |
1984.11.13 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
IWASE, TAIRA C/O PATENT DIVISION;ARIIZUMI, SHOJI C/O PATENT DIVISION;MASUOKA, FUJIO C/O PATENT DIVISION |
分类号 |
H01L29/78;H01L21/8246;H01L23/522;H01L27/10;H01L27/112;(IPC1-7):H01L27/10;H01L23/52;G11C17/00;H01L21/82 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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