| 摘要 |
This inventive DMOS transistor provides faster turn-on switching than prior art lateral and vertical DMOS transistors in dV/dt situations and prevents catastrophic failures from high dV/dt's. The preferred embodiment of this improved device combines a Schottky diode with a vertical DMOS transistor, within the semiconductor structure itself, to form a device equivalent to a Schottky diode in parallel with an N channel vertical DMOS transistor. The Schottky diode effectively replaces the body diode of the transistor when forward biasing voltages are applied to the DMOS transistor. Thus, the body diode is never forward biased and there is no recovery time associated with the body diode. This speeds up the turn-on of the DMOS transistor since there are no minority carriers in the P-N junction body diode to recombine. Also, the parasitic bipolar junction transistor (BJT), formed by the source, body region, and drain, cannot turn on, thus preventing second breakdown of the BJT.
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