| 摘要 |
PURPOSE:To form an insulating film pattern having an excellent end-face shape by shaping an insulating film onto the whole surface on a foundation substrate, patterning the insulating film by a resist layer formed onto the insulating film, applying a resist onto the exposed surface of the substrate again and removing the insulating film. CONSTITUTION:An SiN layer 2 is formed onto the whole surface on a GaAs substrate 1 as an insulating film, and a resist layer 3 following a specified pattern is shaped onto the insulating film 2. The insulating film 2 is patterned by utilizing a pattern formed to the resist layer 3. The whole is dipped in acetone, and the resist layer 3 is removed once. A resist 4 in thickness of approximately 2mum is applied to the whole substrate 1, on which the patterned insulating film 2 is loaded, and the surface is flattened. The whole is etched by using oxygen gas by an RIE device gain, and etching is completed when the top face of the insulating film 2 is exposed. Lastly, the SiN film 2 is removed by employing diluted hydrofluoric acid, thus acquiring the resist pattern 4. |
