| 摘要 |
<p>PURPOSE:To enable the conventional thin film transistor to be manufactured using a smaller number of masks by a method wherein two semiconductor films are processed using an integrated source.drain electrode pattern as a mask while another semiconductor film with impurity-doped channel part is removed using a transparent electrode pattern as a mask. CONSTITUTION:A semiconductor film 4 and an impurity-doped semiconductor film 5 are processed using an integrated source.drain electrode pattern 5 as a mask and then the semiconductor film 5 with impurity-doped channel part is removed using a transparent electrode 7 as a mask. For example after forming a gate electrode 2 as a glass substrate 1, a gate insulating film 3, a semiconductor film 4 and the semiconductor film 5 doped with impurity are deposited and furthermore the metallic film 6 for source.drain electrode is laminated. Next, the source.drain electrode film 6 comprising integrated source.drain electrode, the doped semiconductor film 5 and the semiconductor film 4 are patterned. Finally, the transparent electrode 7 is formed to remove the source.drain electrode metallic film 6 of channel part and the doped semiconductor film 5 using the transparent electrode 7 as a mask.</p> |
