| 摘要 |
PURPOSE:To grow a film on a core film at high speed, by a method wherein light having a wavelength best suitable for pattern drawing is applied to a substrate to form a thin film as a grown-film core, and then, light having a wavelength best suitable for film growth is applied to a reactive gas. CONSTITUTION:A quartz substrate 5 is heated as at 6 to about 350 deg.C. An Ar laser beam 15 for pattern drawing is applied to the substrate 5 from a light source 16 to selectively form on the substrate 5 a thin film as a grown-film core. With the substrate 5 maintained at about 100 deg.C, silane in a chamber 1 is irradiated with an ArF excimer laser beam 7 from a light source 8. Selection of the repetition frequency of the laser beam, the temperature of the substrate 5, the gas pressure and the component ratio to be proper values allows an Si film with a predetermined film thickness to be insularly formed only on the thin film as the core. Although while the silane pressure is low the film formation speed is low, the film can be selectively formed. As the gas pressure and the laser output increase, the selectivity becomes unclear, and the film is formed on the whole surface. |
