Thin film mos transistor having pair of gate electrodes opposing across semiconductor layer.

摘要

A thin film MOS transistor (1) has a construction which can minimize scattering of electron and thus maximize electron mobility for allowing higher speed operation of the transistor. Toward this, the MOS transistor has a thin film form semiconductor layer (5) having a thickness in a range less than or equal to 100 nm, between a pair of gate electrodes (3, 7) which oppose to each other across the semiconductor layer (5).