| 摘要 |
PURPOSE:To make it possible to manufacture a chemical sensitive field effect transistor characterized by high insulation property and excellent stability, by forming a plasma polymerization film on a substrate in a position selecting manner. CONSTITUTION:A metal mask 14 is overlapped on a contact part and a gate part on a silicon substrate 13 and arranged in a plasma polymerization apparatus. A plasma polymerization film 15 is formed in a position selecting manner by a method for exciting gas molecules with an electrostatic coil. When such a plasma polymerization method is used, an organic thin film can be formed even on the surfaces of a three-dimensionally machined material and discontinuous parts. Insulation resistance becomes very high. Leaking current and the like are not observed in the chemical sensitive field effect transistor having the plasma polymerization film in ordinary using methods, and measurement characterized by very excellent stability can be performed. |
