发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To make a bonding wire hard to be short-circuited by a method wherein first internal electrodes formed in a line in a vertical direction on the step higher than an IC chip mounting section by a step and second internal electrodes formed at the position higher than the first internal electrodes in level by 20-80mum are provided. CONSTITUTION:Internal electrodes 3 in the first row are equal to internal electrodes 2 in the second row in thickness and an alumina coated film 10 20-80mum in thickness is formed on a step on a ceramic substrate where the internal electrodes 2 in the second row are to be built before these internal electrodes 2 and 3 are printed on. Therefore, the internal electrodes in the second row are made to be substantially higher than the first row internal electrodes in level by 20-80mum, whereby a bonding wire 6 in the first row connecting the first row internal electrodes 3 with each connecting section of an IC chip is made to differ from a bonding wire 5, which connects the second row internal electrodes 2 with each connecting section of an IC chip 7, in level, so that the short-circuit between the first row bonding wire 6 and the second row bonding wire 5 is prevented from taking place.</p>
申请公布号 JPS6447060(A) 申请公布日期 1989.02.21
申请号 JP19870205481 申请日期 1987.08.18
申请人 NEC CORP 发明人 KATSURAOKA KIYOSHI
分类号 H01L23/08;H01L23/48 主分类号 H01L23/08
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