| 摘要 |
PURPOSE:To reduce the length of a resistor element without decreasing the resistance value, and improve the integration degree of an integrated circuit, by connecting a resistor element to a power supply wiring on the side wall surface of the power supply wiring. CONSTITUTION:On an N<+> type diffusion layer 13, a resistor element 18A whose one end is connected to the diffusion layer 13 via a contact hole is formed. The other end of the element 18A is connected to the side wall surface of a molybudenum silicide wiring 15A. Thus, the length of the element 18A can be reduced without decreasing the resistance value. Thereby, the integration degree of an integrated circuit can be increased. |
