| 摘要 |
PURPOSE:To easily obtain a wafer chuck surface of a high accuracy by manufacturing a chuck surface by etching method. CONSTITUTION:An Si wafer 5 larger than a wafer to be chucked is preared, and an oxide film 8 is formed by oxidizing the surface. Next, a resist 9 is coated and exposed by a photo mask 11. The resist 9 is removed by etching the oxide film 8 after development. Then, the Si is etched with the oxide film 8 as the mask. Holes 17 for the purpose of vacuum drawing are bored. It makes a chuck surface form 21 of diaphragm system. Coating and plating are performed thereto according to necessity, resulting in the assembly of a wafer chuck. |
