Superlattice semiconductor device

摘要

If superlattice semiconductor devices are to be used in highly integrated circuits, the available area for the superlattice semiconductor device is rendered too small. The aim is therefore to provide a possibility for using reliable superlattice semiconductor devices in highly integrated circuits as well. The superlattice semiconductor device according to the invention has superlattice layers (4a, 4a', 5a) which are coated one above another on the entire surface of a trench (20) formed in a semiconductor substrate or on the entire surface of a convex region formed on a surface of the semiconductor substrate. Such superlattice devices can be used, in particular, in resonant tunnel devices. <IMAGE>