| 摘要 |
PURPOSE:To cut down the time required for a lithographic process by a method wherein fine patterns of four adjacent semiconductor integrated circuits are gathered around the central part to be simultaneously formed into a block by means of a contraction projection exposure device. CONSTITUTION:A reticle 22 holding patterns to be transferred corresponding to fine patterns of overall contracted fine pattern formation parts 11b is prepared. Then, the patterns to be transferred held on the reticle 22 are successively transferred to the resist on a wafer by step and repeat shifting process using a contracted projection exposure device. At this time, a full-size exposure mask holding the patterns excluding the fine pattern formation parts 11b i.e. the patterns to be transferred corresponding to all rough patterns A on the wafer is prepared. The patterns to be transferred held on the mask by the full-size exposure device are temporarily transferred to the resist on the wafer. Through these procedures, the time required for lithographic process can be cut down. |
